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| MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBTA42) Ideal for Medium Power Amplification and Switching E SOT-23 A C B B TOP VIEW E D G H K J L M C Dim A B C D E G H J K L M a Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 Mechanical Data * * * * * * * * Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K3R Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) C B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBTA92 -300 -300 -5.0 -500 300 417 -55 to +150 Unit V V V mA mW C/W C Characteristic Collector Current (Note 1) (Note 3) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -300 -300 -5.0 3/4 3/4 25 40 25 3/4 3/4 3/4 50 Max 3/4 3/4 3/4 -250 -100 Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCB = -200V, IE = 0 VCE = -3.0V, IC = 0 IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -30mA, VCE = -10V IC = -20mA, IB = -2.0mA IC = -20mA, IB = -2.0mA VCB = -20V, f = 1.0MHz, IE = 0 VCE = -20V, IC = -10mA, f = 100MHz hFE VCE(SAT) VBE(SAT) Ccb fT 3/4 -0.5 -0.9 6.0 3/4 3/4 V V pF MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RqJA), power dissipation rating (Pd) and power derating curve (figure 1). DS30060 Rev. 5 - 2 1 of 2 www.diodes.com MMBTA92 Ordering Information Device MMBTA92-7 Notes: (Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3R K3R = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30060 Rev. 5 - 2 2 of 2 www.diodes.com YM MMBTA92 |
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